4N60F MOSFET Datasheet Pdf - Equivalent. Cross Reference Search

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4N60F Specs and Replacement

Type Designator: 4N60F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 66 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO220F

4N60F substitution

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