600V And 650V CoolMOS™ C7 - Infineon Technologies

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600V and 650V CoolMOS™ C7

600V and 650V CoolMOS™ C7 Overview

Designed to achieve record level efficiency performance

Infineon’s 600 V and 650 V CoolMOS™ C7 superjunction (SJ) MOSFET families are designed to achieve record level efficiency performance, offering substantial efficiency benefits over the whole load range in hard switching applications compared to previous CoolMOS™ series and competitors.

600 V CoolMOS™ C7 – our flagship CoolMOS™ technology for hard and high-end soft switching topologies

The 600 V CoolMOS™ C7 series offers approximately 50% reduction in turn-off losses (Eoss) compared to the CoolMOS™ CP. It offers an outstanding level of performance in PFC, TTF and other hard-switching as well as in high-end LLC topologies and extends the use of silicon MOSFETs to the next generation of highest efficiency power designs.

650 V CoolMOS™ C7 – market leading best-in-class on-resistance per package

The 650 V CoolMOS™ C7 series brings a new level of performance in hard switching applications such as power factor correction (PFC) when additional 50 V of breakdown voltage is needed versus 600 V CoolMOS™ C7. It provides efficiency benefits across the whole load range through balancing a number of key parameters.

Products Details

Features, benefits and applications of 600 V and 650 V CoolMOS™ C7 power MOSFET

Features

Reduced switching loss parameters such as QG, Coss, enabling higher switching frequency
50% Eoss reduction compared to older CoolMOS™ CP
Suitable for hard switching topologies (650 V and 600 V)
Suitable for high-end resonant (600 V only) topologies

Benefits

Increased efficiency in hard switching topologies such as PFC and TTF
Reduced size and cost of magnetic components by increased switching frequency (e.g. 65kHz -130kHz)
Increased power density by smaller packages for same RDS(on)