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C5339 Datasheet This post explains for the transistor C5339. The Part Number is 2SC5339. The function of this semiconductor is 600V, 7A, NPN Transistor. The package is TO-3P Type Manufacturer: Toshiba Semiconductor Preview images : 1 page  Description C5339 is 600V, 7A, NPN transistor. This Transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits. NPN Configuration 1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor. 2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector. 3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction. Silicon NPN Epitaxial Planar Transistors are fundamental components in electronic circuits, playing a crucial role in amplification, signal processing, and digital logic. They are widely used in a vast array of electronic devices, including radios, amplifiers, computer processors, and many other applications where signal control and amplification are essential. Features 1. Low Saturation Voltage : VCE (sat) = 5 V (Max.) 2. High Speed : tf = 0.2 μs (Typ.) 3. Bult−in Damper Type 4. Collector Metal (Fin) is Fully Covered with Mold Resin [...] 2 page  Absolute maximum ratings ( Ta=25°C ) 1. Collector to Base Voltage: Vcbo = 1500 V 2. Collector to Emitter Voltage: Vceo = 600 V 3. Emitter to Base Voltage: Vebo = 5 V 4. Collector Current: Ic = 7 A 5. Collector Dissipation : Pc = 50 W 6. Junction Temperature: Tj = 150°C 7. Storage Temperature: Tsg = -55 ~ +150°C C5339 PDF Datasheet  |
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