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Dry Cleaning Technology for Removal of Silicon Native Oxide Employing Hot NH3/NF3 Exposure

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Copyright (c) 2002 The Japan Society of Applied Physics Japanese Journal of Applied Physics, Volume 41, Number 8R Citation Hiroki Ogawa et al 2002 Jpn. J. Appl. Phys. 41 5349 DOI 10.1143/JJAP.41.5349

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Hiroki Ogawa

AFFILIATIONS

Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

Tomoharu Arai

AFFILIATIONS

Department of Electric and Electronic Engineering, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585, Japan

Michihiko Yanagisawa

AFFILIATIONS

Speedfam Co., Ltd., 2647 Hayakawa, Ayase, Kanagawa 252-1123, Japan

Takanori Ichiki

AFFILIATIONS

Department of Electric and Electronic Engineering, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585, Japan

Yasuhiro Horiike

AFFILIATIONS

Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

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Open science Authors

Hiroki Ogawa

AFFILIATIONS

Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

Tomoharu Arai

AFFILIATIONS

Department of Electric and Electronic Engineering, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585, Japan

Michihiko Yanagisawa

AFFILIATIONS

Speedfam Co., Ltd., 2647 Hayakawa, Ayase, Kanagawa 252-1123, Japan

Takanori Ichiki

AFFILIATIONS

Department of Electric and Electronic Engineering, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585, Japan

Yasuhiro Horiike

AFFILIATIONS

Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

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