FDC8886 MOSFET. Datasheet Pdf. Equivalent

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FDC8886 Specs and Replacement

Type Designator: FDC8886 Type of Transistor: MOSFET Type of Control Channel: N -Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V |Id| ⓘ - Maximum Drain Current: 8 A Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm Package: SSOT6

FDC8886 substitution - MOSFET ⓘ Cross-Reference Search

FDC8886 datasheet

 ..1. Size:261K  fairchild semi fdc8886.pdf

January 2012 FDC8886 N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 m Features General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 36 m at VGS = 4.5 V, ID = 6.0 A been optimized for rDS(on) switching performance. High performance trench te... See More ⇒

 ..2. Size:411K  onsemi fdc8886.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 8.1. Size:261K  fairchild semi fdc8884.pdf

January 2012 FDC8884 N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 m Features General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 30 m at VGS = 4.5 V, ID = 6.0 A been optimized for rDS(on) switching performance. High performance trench te... See More ⇒

 8.2. Size:863K  cn vbsemi fdc8884.pdf

FDC8884 www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 0.030 at VGS = 10 V 6 Low On-Resistance 30 4.2 nC 0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TSOP-6 APPLICATIONS DC/DC C... See More ⇒

 9.1. Size:250K  fairchild semi fdc8878.pdf

January 2012 FDC8878 N-Channel PowerTrench MOSFET 30 V, 8.0 A, 16 m Features General Description Max rDS(on) = 16 m at VGS = 10 V, ID = 8.0 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 18 m at VGS = 4.5 V, ID = 7.5 A been optimized for rDS(on), switching performance. High performance trench t... See More ⇒

 9.2. Size:402K  onsemi fdc8878.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

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Detailed specifications: FDMB2307NZ , NDS331N , RFD14N05SM9A , SI3443DV , SI4532DY , FDMA905P , FDME905PT , SI4542DY , 4N60 , FCP190N60 , SSN1N45B , DMG1012T , DMG1012UW , DMG1024UV , DMG2302U , DMG3414U , DMG3420U .

Keywords - FDC8886 MOSFET specs

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