Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits English한국어日本語русский简体中文español Part NameDescription G03H1202 View Datasheet(PDF) - Infineon Technologies Part NameDescriptionManufacturerG03H1202HighSpeed 2-Technology
Infineon Technologies
G03H1202 Datasheet PDF : 13 Pages | 1 2 3 4 5 6 7 8 9 10 Next Last |
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IGP03N120H2,IGW03N120H2IGB03N120H2HighSpeed 2-Technology• Designed for:- SMPS- Lamp Ballast- ZVS-Converter- optimised for soft-switching / resonant topologies• 2nd generation HighSpeed-Technologyfor 1200V applications offers:- loss reduction in resonant circuits- temperature stable behavior- parallel switching capability- tight parameter distribution- Eoff optimized for IC =3AP-TO-220-3-1(TO-220AB)CGEP-TO-263-3-2 (D²-PAK)(TO-263AB)• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/P-TO-247-3-1(TO-247AC)TypeVCEICEoffTjPackageOrdering CodeIGW03N120H2 1200V 3A 0.15mJ 150°C P-TO-247Q67040-S4596IGP03N120H2 1200V 3A 0.15mJ 150°C P-TO-220-3-1Q67040-S4599IGB03N120H2 1200V 3A 0.15mJ 150°C P-TO-263 (D2PAK) Q67040-S4598Maximum RatingsParameterCollector-emitter voltageTriangular collector currentTC = 25°C, f = 140kHzTC = 100°C, f = 140kHzPulsed collector current, tp limited by TjmaxTurn off safe operating areaVCE ≤ 1200V, Tj ≤ 150°CGate-emitter voltagePower dissipationTC = 25°COperating junction and storage temperatureSoldering temperature, 1.6mm (0.063 in.) from case for 10sSymbolVCEICICpuls-VGEPtotTj , Tstg-ValueUnit1200VA9.63.99.99.9±20V62.5W-40...+150°C260225 (for SMD)Power Semiconductors1Rev. 2, Mar-04 Share Link: datasheetq.com [ Privacy Policy ]
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