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Breakthrough bandwidth for large-scale AI Breakthrough bandwidth for large-scale AI Breakthrough bandwidth for large-scale AI
The forefront high-bandwidth memory forhyperscale AI training workloadsThe forefront high-bandwidth memory for hyperscale AI training workloadsThe forefront high-bandwidth memory for hyperscale AI training workloads
Samsung HBM (High Bandwidth Memory) integrates advanced TSV-based stacking with high-throughput memory performance to accelerate AI training and HPC workloads. Designed for data-intensive and highly parallel operations, the HBM family delivers the ultra-fast, seamless data movement needed to power next-generation AI infrastructure. With its stacked architecture and wide interface, Samsung HBM improves system-level efficiency across the industry’s most complex workloads.
Samsung HBM (High Bandwidth Memory) integrates advanced TSV-based stacking with high-throughput memory performance to accelerate AI training and HPC workloads. Designed for data-intensive and highly parallel operations, the HBM family delivers the ultra-fast, seamless data movement needed to power next-generation AI infrastructure. With its stacked architecture and wide interface, Samsung HBM improves system-level efficiency across the industry’s most complex workloads.
Samsung HBM (High Bandwidth Memory) integrates advanced TSV-based stacking with high-throughput memory performance to accelerate AI training and HPC workloads. Designed for data-intensive and highly parallel operations, the HBM family delivers the ultra-fast, seamless data movement needed to power next-generation AI infrastructure. With its stacked architecture and wide interface, Samsung HBM improves system-level efficiency across the industry’s most complex workloads.
HBM3EHBM3EHBM3E
Designed for extreme AI workloads, Samsung HBM3E delivers up to 9.2 Gb/s per pin and up to 1,180 GB/s of bandwidth per stack, powering LLMs, generative AI, and advanced inference with remarkable speed and efficiency. Trusted for demanding AI platforms, Samsung HBM3E also provides a clear evolution path toward next-generation memory innovation.
Capacity
36GB, 24GB
Speed
up to 9.2 Gbps
Stack
12H, 8H
Package
MPGA
Refresh
32ms
Organization
1024
View more Learn more
HBM3HBM3HBM3
Designed for advanced AI and HPC systems, Samsung HBM3 delivers 6.4 Gb/s per pin and up to 819 GB/s of bandwidth per stack, with 16GB and 24GB capacity options. Widely adopted across AI training clusters, inference systems, GPUs, and HPC accelerators, Samsung HBM3 offers an ideal balance of throughput and efficiency, establishing a proven foundation for modern AI platforms.
Capacity
24GB, 16GB
Speed
up to 6.4 Gbps
Stack
12H, 8H
Package
MPGA
Refresh
32ms
Organization
1024
View more Learn more
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closeFAQsFAQsFAQsDoes NCF also use copper?
Non-Conductive Film (NCF) is an insulating adhesive film used to bond a semiconductor die to a substrate, and it does not contain copper itself. However, it is commonly used together with copper micro-bumps, helping to secure the die-to-substrate connection with precise gap control and without electrical interference. NCF is a key material in advanced, high-density packaging that provides reliable adhesion using controlled heat and pressure.
Non-Conductive Film (NCF) is an insulating adhesive film used to bond a semiconductor die to a substrate, and it does not contain copper itself. However, it is commonly used together with copper micro-bumps, helping to secure the die-to-substrate connection with precise gap control and without electrical interference. NCF is a key material in advanced, high-density packaging that provides reliable adhesion using controlled heat and pressure.
Non-Conductive Film (NCF) is an insulating adhesive film used to bond a semiconductor die to a substrate, and it does not contain copper itself. However, it is commonly used together with copper micro-bumps, helping to secure the die-to-substrate connection with precise gap control and without electrical interference. NCF is a key material in advanced, high-density packaging that provides reliable adhesion using controlled heat and pressure.
What is Samsung’s competitive position in the HBM market?
The HBM market is highly competitive, and each company adjusts its development and mass-production timelines based on its own priorities and strategies. Samsung continues to strengthen its customer-optimized HBM solutions through technological capability, product quality, and manufacturing stability. Rather than focusing solely on short-term market share, Samsung prioritizes long-term technology leadership and customer trust, which is expected to further reinforce its competitive position.
The HBM market is highly competitive, and each company adjusts its development and mass-production timelines based on its own priorities and strategies. Samsung continues to strengthen its customer-optimized HBM solutions through technological capability, product quality, and manufacturing stability. Rather than focusing solely on short-term market share, Samsung prioritizes long-term technology leadership and customer trust, which is expected to further reinforce its competitive position.
The HBM market is highly competitive, and each company adjusts its development and mass-production timelines based on its own priorities and strategies. Samsung continues to strengthen its customer-optimized HBM solutions through technological capability,product quality, and manufacturing stability. Rather than focusing solely on short-term market share, Samsung prioritizes long-term technology leadership and customer trust, which is expected to further reinforce its competitive position.
What exactly is NCF in simple terms?
NCF (Non-Conductive Film) is a non-conductive adhesive film used to bond a semiconductor die to a substrate.
NCF (Non-Conductive Film) is a non-conductive adhesive film used to bond a semiconductor die to a substrate.
NCF (Non-Conductive Film) is a non-conductive adhesive film used to bond a semiconductor die to a substrate.
In Advanced TC NCF, what makes it “advanced” compared to conventional TC NCF?
Advanced TC NCF improves upon conventional TC NCF by providing more precise control of temperature and pressure during bonding and by using enhanced NCF materials. These improvements help reduce voids, contamination, and defects, enabling a more reliable high-density packaging process.
Advanced TC NCF improves upon conventional TC NCF by providing more precise control of temperature and pressure during bonding and by using enhanced NCF materials. These improvements help reduce voids, contamination, and defects, enabling a more reliable high-density packaging process.
Advanced TC NCF improves upon conventional TC NCF by providing more precise control of temperature and pressure during bonding and by using enhanced NCF materials. These improvements help reduce voids, contamination, and defects, enabling a more reliable high-density packaging process.
What is the outlook for DRAM die process technology?
DRAM die processes continue to advance through further scaling, allowing more memory cells to be integrated into smaller areas. In the longer term, 3D architectures and new materials are also being explored to address physical scaling limits.
DRAM die processes continue to advance through further scaling, allowing more memory cells to be integrated into smaller areas. In the longer term, 3D architectures and new materials are also being explored to address physical scaling limits.
DRAM die processes continue to advance through further scaling, allowing more memory cells to be integratedinto smaller areas. In the longer term, 3D architectures and new materials are also being explored to address physical scaling limits.
What does an HBM package look like? What is the typical size?
High Bandwidth Memory (HBM) consists of multiple memory dies stacked vertically and interconnected through TSVs (Through-Silicon Vias). The package is typically a thin, nearly square unit of around 1–2 cm² in area and approximately 1 mm thick, with thickness depending on the number of stacked dies.
High Bandwidth Memory (HBM) consists of multiple memory dies stacked vertically and interconnected through TSVs (Through-Silicon Vias). The package is typically a thin, nearly square unit of around 1–2 cm² in area and approximately 1 mm thick, with thickness depending on the number of stacked dies.
High Bandwidth Memory (HBM) consists of multiple memory dies stacked vertically and interconnected through TSVs (Through-Silicon Vias). The package is typicallya thin, nearly square unit of around 1–2 cm² in area and approximately 1 mm thick, with thickness depending on the number of stacked dies.
How many layers does HBM typically have?
HBM products commonly come in 4-high, 8-high, and 12-high stack configurations, depending on the product generation. More layers provide higher capacity and bandwidth but also increase thermal and manufacturing challenges.
HBM products commonly come in 4-high, 8-high, and 12-high stack configurations, depending on the product generation. More layers provide higher capacity and bandwidth but also increase thermal and manufacturing challenges.
HBM products commonly come in 4-high, 8-high, and 12-high stack configurations, depending on the product generation. More layers provide higher capacity and bandwidth but also increase thermal and manufacturing challenges.
When will HBM customer qualification be completed?
Specific timelines for HBM customer qualification have not been publicly disclosed.
Specific timelines for HBM customer qualification have not been publicly disclosed.
Specific timelines for HBM customer qualification have not been publicly disclosed.
Applications for HBM
Samsung Semiconductor Solutions, Server & Network Applications Server
Evolution of semiconductor solutions for servers
Explore more about HBM
View more Sorry, no matches were found. * All design, features and specifications represented herein may change without notice. * Images shown here have been adjusted for demonstration purposes and may appear differently on the actual products. * All data on products herein, including their performances, are based on internal testing using standard Samsung benchmarks under laboratory conditions.
Test results do not guarantee future performance under such test conditions, and the actual throughput or performance that any user will experience may vary depending upon many factors.
* For further details on product specifications, please contact the sales representative of your region.
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