IRG4PC50U IGBT. Datasheet Pdf - Equivalent

IRG4PC50U IGBT. Datasheet pdf. Equivalent Type Designator: IRG4PC50U Type: IGBT Type of IGBT Channel: N Pcⓘ - Maximum Power Dissipation: 200 W |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V |Ic|ⓘ - Maximum Collector Current: 55 A @25℃ |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃ |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V Tjⓘ - Maximum Junction Temperature: 150 ℃ trⓘ - Rise Time, typ: 20 nS Coesⓘ - Output Capacitance, typ: 250 pF Qgⓘ - Total Gate Charge, typ: 180 nC Package: TO247AC

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IRG4PC50U Datasheet (PDF)

 ..1. Size:153K  international rectifier irg4pc50u.pdf

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.65VG parameter distribution and higher efficiency than Generation 3

 0.1. Size:219K  international rectifier irg4pc50ud.pdf

PD 91471BIRG4PC50UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 1.65V Generation 4 IGBT design provides tighterG parameter distribution an

 0.2. Size:635K  infineon irg4pc50upbf.pdf

PD -95186IRG4PC50UPbFUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.65VG parameter distribution and higher efficiency than Generation 3@VGE = 15V, IC = 27AE Industr

 0.3. Size:687K  infineon irg4pc50udpbf.pdf

PD -95185IRG4PC50UDPbF UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.65V parameter distribution and higher efficiency thanG Generation

Datasheet: IRG4PC40U , IRG4PC40UD , IRG4PC40W , IRG4PC50F , IRG4PC50FD , IRG4PC50K , IRG4PC50KD , IRG4PC50S , IKW75N60T , IRG4PC50UD , IRG4PC50W , IRG4PF50W , IRG4PF50WD , IRG4PH20K , IRG4PH20KD , IRG4PH30K , IRG4PH30KD .