NUS2401: Bipolar Digital Transistor, NPN / PNP, Integrated - Onsemi

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Bipolar Digital Transistor, NPN / PNP, Integrated

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This Integrated NPN PNP Bipolar Digital Transistor is designed to replace a discrete solution array of three transistors and their external resistor bias network. BRTs (Bias Resistor Transistors) contain a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT technology eliminates these individual components by integrating them into a single device, therefore the integration of three BRTs results in a significant reduction of both system cost and board space.

Application

  • Audio Muting
  • Drive Circuits

End Product

  • Small Appliances, Security Systems, Automated Test Equipment
  • TVs and VCRs, Stereo Receivers, CD Players, Cassette Recorders

Feature

  • Integrated Design
  • Reduces Board Space & Components Count
  • Simplifies Circuitry Design

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Reliability Data

Die Related Summary Data

Device: NUS2401SNT1G

Equivalent to wafer fab process: SST

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

SST

0

4654891639

More Details

Re-calculate Data

Data is based on the following assumptions.

Activation Energy (constant) [EV] Junction Temperature (25 - 175) [°C] 60 90 95 99 One-sided Upper Confidence Level [%]

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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