NUS2401: Bipolar Digital Transistor, NPN / PNP, Integrated - Onsemi
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Bipolar Digital Transistor, NPN / PNP, Integrated
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Product Details Technical DocumentationOverview
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This Integrated NPN PNP Bipolar Digital Transistor is designed to replace a discrete solution array of three transistors and their external resistor bias network. BRTs (Bias Resistor Transistors) contain a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT technology eliminates these individual components by integrating them into a single device, therefore the integration of three BRTs results in a significant reduction of both system cost and board space.
Application
- Audio Muting
- Drive Circuits
End Product
- Small Appliances, Security Systems, Automated Test Equipment
- TVs and VCRs, Stereo Receivers, CD Players, Cassette Recorders
Feature
- Integrated Design
- Reduces Board Space & Components Count
- Simplifies Circuitry Design
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Die Related Summary Data
Device: NUS2401SNT1G
Equivalent to wafer fab process: SST
Product Technology
Product Technology
Equivalent Device-Hours
MTBF/MTTF in Hours
FITS
SST
0
4654891639
More Details
Re-calculate Data
Data is based on the following assumptions.
Activation Energy (constant) [EV] Junction Temperature (25 - 175) [°C] 60 90 95 99 One-sided Upper Confidence Level [%]Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)
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