Reliability Scaling Limit Of 14-Å Oxynitride Gate Dielectrics By ...

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Reliability Scaling Limit of 14-Å Oxynitride Gate Dielectrics by Different Processing Treatments

Tung-Ming Pan and Chuan-Hsi Liu

Published 30 September 2005 • © 2005 ECS - The Electrochemical Society Journal of The Electrochemical Society, Volume 152, Number 11Citation Tung-Ming Pan and Chuan-Hsi Liu 2005 J. Electrochem. Soc. 152 G851DOI 10.1149/1.2051827

Authors

Tung-Ming Pan

AFFILIATIONS

Department of Electronics Engineering, Chang Gung University, Taoyuan, Taiwan

Author notes

E-mail: [email protected]

Chuan-Hsi Liu

AFFILIATIONS

Department of Electronics Engineering, Ming Chuan University, Taoyuan, Taiwan

Notes

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Open scienceAuthors

Tung-Ming Pan

AFFILIATIONS

Department of Electronics Engineering, Chang Gung University, Taoyuan, Taiwan

Author notes

E-mail: [email protected]

Chuan-Hsi Liu

AFFILIATIONS

Department of Electronics Engineering, Ming Chuan University, Taoyuan, Taiwan

Notes

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Dates

1. Received 18 April 2005
2. Revised 12 July 2005
3. Published 30 September 2005

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Abstract

Various ultrathin oxynitride gate dielectrics of similar thickness processed by a rapid thermal NO-nitrided oxide (RTNO), a remote plasma nitrided oxide (RPN), a remote plasma nitridation of oxide with rapid thermal NO annealing , and a rapid thermal reoxidation of remote plasma nitrided oxide (ReoxRPN) are reported for the first time as a means to extend the reliability scaling limit of /oxynitride-based gate dielectrics. The gate dielectric films show superior interface properties, significantly reduced leakage current, and improved reliability compared to other gate dielectrics fabricated by different processes.

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