Thesis | A Kinetic Study Of Gallium Arsenide Etching In H2O2-NH4OH ...

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Thesis A kinetic study of gallium arsenide etching in H2O2-NH4OH-H2O solutions / Public Deposited Analytics × Add to collection You do not have access to any existing collections. You may create a new collection. Close

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• Bryce, Christine

Contributors

• Berk, Dimitrios (Supervisor)

Description

• Berk, Dimitrios (Supervisor)

Abstract

English

• Gallium arsenide, a compound semiconductor commonly used in optoelectronic devices, is often subjected to wet etching techniques during microelectronic device manufacture. In this work, the wet chemical etching of gallium arsenide in $ rm H sb2O sb2$-$ rm NH sb4OH$-H$ sb2$O solutions was studied using a batch stirred-tank reactor. A kinetic control regime was established and the influence of each component's concentration on the intrinsic etch rate was determined. The reaction rate was found, in the presence of excess NH$ sb4$OH, to fit a rate equation, r = k (H$ rm sb2O sb2 rbrack sp{0.75}$ at 15, 25, and 40$ sp circ$C with an activation energy of 33.7 kJ/mol. Using NaOH instead of NH$ sb4$OH resulted in greatly reduced reaction rates, and it was concluded that the presence of the ammonium ion increases the rate by forming soluble compounds with oxidized species of Ga and As. When mass transfer resistances are introduced, using a flow reactor to simulate an industrial etching apparatus, the reaction rates are considerably reduced and the rate's dependence on $ rm H sb2O sb2$ concentration is shifted closer to linear. Convective mass transfer expressions for flow past a flat plate were successfully used to predict the etch rate. The two reactors were used to etch samples masked by a circuit pattern, and the crystallography of GaAs dictated the shape of the etch profiles rather than the mass transfer limitations of the system.

Last modified

• 2021-10-14

Subject

• Chemical Engineering
• Inorganic Chemistry
• Materials Science

Publisher

• McGill University

Language

• English

Identifier

•  https://escholarship.mcgill.ca/concern/theses/fn1070622

Rights

• All items in eScholarship@McGill are protected by copyright with all rights reserved unless otherwise indicated.

Institution

• McGill University

Department

• Department of Chemical Engineering

Degree

• Doctor of Philosophy

Type

• Thesis

Date

• 1996

Relations In Collection:

• Theses & Dissertations

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	q811km21x	2019-09-30	Public	Download