2SC5353 . Datasheet. Equivalente. Reemplazo. Hoja De ...

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2SC5353 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC5353 Material: Si Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 25 W Tensión colector-base (Vcb): 900 V Tensión colector-emisor (Vce): 800 V Tensión emisor-base (Veb): 7 V Corriente del colector DC máxima (Ic): 3 A Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 15 Paquete / Cubierta: TO220NIS

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2SC5353 datasheet

 ..1. Size:207K  toshiba 2sc5353.pdf

 ..2. Size:273K  utc 2sc5353.pdf

UNISONIC TECHNOLOGIES CO., LTD 2SC5353 NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR 1 1 TO-126 TO-126C DESCRIPTION Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications 1 1 TO-220 TO-220F FEATURES * Excellent switching times tR = 0.7 s(MAX), tF = 0.5 s (MAX) * High collectors breakdown voltage VCEO = 700V 1

 ..3. Size:208K  inchange semiconductor 2sc5353.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5353 DESCRIPTION Collector Emitter Sustaining Voltage V = 800V(Min.) CEO(SUS) Low Collector Saturation Voltage V =1V(Max) @ I = 1.2A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in lighting applications and low cost switch-mode power

 0.1. Size:275K  utc 2sc5353b.pdf

UNISONIC TECHNOLOGIES CO., LTD 2SC5353B NPN SILICON TRANSISTOR HIGH VOLTAGE NPN 1 1 TRANSISTOR TO-126 TO-126C DESCRIPTION 1 1 TO-220 TO-220F Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications. FEATURES 1 1 * Excellent switching times tR = 0.7 s(MAX), tF = 0.5 s (MAX) TO-220F1 TO-251 * High collectors breakdown

 8.1. Size:191K  toshiba 2sc5351.pdf

 8.2. Size:175K  toshiba 2sc5356.pdf

2SC5356 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC5356 High Voltage Switching Applications Unit mm Switching Regulator Applications DC-DC Converter Applications Excellent switching times tf = 0.5 s (max) (I = 1.2 A) C High collectors breakdown voltage V = 800 V CEO High DC current gain h = 15 (min) (I = 0.15 A) FE C Maximum Ra

 8.3. Size:188K  toshiba 2sc5352.pdf

 8.4. Size:121K  toshiba 2sc5359.pdf

2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit mm High breakdown voltage V = 230 V CEO Complementary to 2SA1987 Suitable for use in 100-W high fidelity audio amplifier s output stage. Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter volta

 8.5. Size:129K  toshiba 2sc5354.pdf

 8.6. Size:151K  toshiba 2sc5355.pdf

2SC5355 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5355 High Voltage Switching Applications Unit mm Switching Regulator Applications DC-DC Converter Applications Excellent switching times tr = 0.5 s (max), t = 0.3 s (max) f High collector breakdown voltage V = 400 V CEO High DC current gain h = 20 (min) FE Maximum Ratings (Ta = 25 C)

 8.7. Size:171K  toshiba 2sc5358.pdf

 8.8. Size:54K  hitachi 2sc535.pdf

2SC535 Silicon NPN Epitaxial Planar Application VHF amplifier, mixer, local oscillator Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC535 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 4V Collector current IC 20 mA Collector power dissipation PC

 8.9. Size:128K  jmnic 2sc5358.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC5358 DESCRIPTION With TO-3P(I) package Complement to type 2SA1986 APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-

 8.10. Size:216K  inchange semiconductor 2sc5352.pdf

isc Silicon NPN Power Transistor 2SC5352 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 8.11. Size:193K  inchange semiconductor 2sc5359.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5359 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR)CEO Complement to Type 2SA1987 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Reco

 8.12. Size:217K  inchange semiconductor 2sc5354.pdf

isc Silicon NPN Power Transistor 2SC5354 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed and high voltage switching applications. Switching regulator applications. High speed DC-DC converter applications. ABSOLUTE M

 8.13. Size:194K  inchange semiconductor 2sc5358.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5358 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR)CEO Complement to Type 2SA1986 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Reco

MOSTRAR MÁS

Otros transistores... 2SC5201 , 2SC5208 , 2SC5242 , 2SC5266A , 2SC5279 , 2SC5307 , 2SC5351 , 2SC5352 , TIP41C , 2SC5354 , 2SC5355 , 2SC5356 , 2SC5358 , 2SC5359 , 2SC5361 , 2SC5368 , 2SC5439 .

Liste

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