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C5353 Datasheet Part Number: C5353, 2SC5353 Function: 800V, 3A, NPN Transistor Package: TO-220 Type Manufacturer: Toshiba 1 page  Description C5353 is Silicon NPN Triple Diffused Type Transistor. This Transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits. NPN Configuration: 1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor. 2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector. 3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction. Features 1. Excellent switching times: tr = 0.7 μs (max), tf = 0.5 μs (max) 2. High collectors breakdown voltage: VCEO = 800 V 2 page  Absolute maximum ratings ( Ta=25°C ) 1. Collector to Base Voltage: Vcbo = 900 V 2. Collector to Emitter Voltage: Vceo = 800 V 3. Emitter to Base Voltage: Vebo = 7 V 4. Collector Current: Ic = 3 A 5. Collector Dissipation : Pc = 2 W 6. Junction Temperature: Tj = 150°C 7. Storage Temperature: Tsg = -55 ~ +150°C Applications: 1. Switching Regulator and High Voltage Switching 2. High-Speed DC-DC Converter C5353 PDF Transistor Datasheet  Posts related to ' NPN Transistor ' | Part number | Description | | C3298 | 160V, 1.5A, Silicon NPN Transistor | | BUL6802 | 400V, 1.2A, NPN Transistor | | 2N4401 | 40V, 0.6A, NPN Transistor - Philips | | 2SC3336 | 400V, 15A, NPN Transistor, C3336 | | 2SD1853 | 60V, 1.5A, NPN Transistor - Sanyo | | 2SC3553 | 35V, 500mA, NPN Transistor | | KD502 | 60V, 20A, NPN Transistor, TO-3 - Tesla | | 2SD880Y | 2SD880Y Datasheet PDF- 60V, 3A, Silicon NPN Transistor | | SS8050 | Ic=1.5A, NPN Transistor - Fairchild | | C4164 | C4164 Datasheet PDF- Vceo=400V, Silicon NPN Transistor | Part Number: C5353, 2SC5353 Function: 800V, 3A, NPN Transistor Package: TO-220 Type Manufacturer: Toshiba Image:  Description This is Silicon NPN Triple Diffused Type Transistor (PCT process). Features 1. Excellent switching times: tr= 0.7 μs (max), tf= 0.5 μs (max) 2. High collectors breakdown voltage: VCEO= 800 V Absolute maximum ratings ( Ta=25°C ) 1. Collector to Base Voltage: Vcbo = 900 V 2. Collector to Emitter Voltage: Vceo = 800 V 3. Emitter to Base Voltage: Vebo = 7 V 4. Collector Current: Ic = 3A 5. Total Dissipation : Pc = 2.0 W 6. Junction Temperature: Tj = 150°C 7. Storage Temperature: Tsg = -55 ~ +150°C Pinouts:  Applications 1. Switching Regulator and High Voltage Switching 2. High-Speed DC-DC Converter  C5353 Datasheet Related articles across the web  Electronic Design's Products of the Week (12/6-12/12) Raspberry Pi SSD shield tosses in WiFi, USB ports, and power Macbook charger teardown: The surprising complexity inside Apple's power adapter |
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