G160N60 PDF - Fairchild, IGBT, 600V, 160A

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Part number : G160N60, SGL160N60UFD

Functions : 600V, 160A, Short Circuit Rated IGBT

Package : TO-264 Type

Manufacturer : Fairchild

Image : G160N60 IGBT

Description

G160N60 is an Integrated Gate Bipolar Transistor (IGBT) manufactured by Fairchild Semiconductor. IGBTs are semiconductor switching devices used in high-voltage and high-current applications, where they are responsible for power conversion and control.

This IGBT has a maximum collector-emitter voltage (Vce) of 600V and a maximum collector current (Ic) of 160A. This provides performance suitable for high voltage and current applications.

Fairchild’s UFD series of Insulated Gate Bipolar Transistors (IGBTs ) provides low conduction and switching losses.The UFD series is designed for applications such as motor  control and general inverters where high speed switching is a required feature.

Features

• High speed switching

• Low Saturation Voltage : V CE(sat) = 2.1 V @ I C = 80A

• High input impedance

Absolute Maximum Ratings (Ta = 25°C)

1. Collector-Emitter Voltage : VCES = 600 V

2. Gate-Emitter Voltage : VGES = ± 20 V

3. Collector Current : ID = 160 A

4. Maximum Power Dissipation : Pd = 250 W

5. Channel temperature : Tch = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

G160N60 Datasheet PDF

Applications :

AC & DC motor controls, general purpose inverters, robotics, servo controls, and power supplies.

G160N60 Datasheet PDF

G160N60 pdf

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