SGL160N60UFD: 600V, 50A Short Circuit Rated IGBT - Onsemi

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600V, 50A Short Circuit Rated IGBT

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ON Semiconductor’s RUFD series of Insulated Gate Bipolar Transistors(IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, UPS and general inverters where short circuit ruggedness is a required feature.

Application

  • Other Industrial

Feature

  • High Speed Switching
  • Low Saturation Voltage : V CE(sat) = 2.1 V @ I C = 80A
  • High Input Impedance
  • CO-PAK, IGBT with FRD : t rr = 75ns (typ.)

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  • Product
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  • V(BR)CES Typ (V)
  • IC Max (A)
  • VCE(sat) Typ (V)
  • VF Typ (V)
  • Eoff Typ (mJ)
  • Eon Typ (mJ)
  • Trr Typ (ns)
  • Irr Typ (A)
  • Gate Charge Typ (nC)
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SGL160N60UFDTU

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Pb

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H

P

TO-264-3

340CA

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0

TUBE

375

N

-

600

160

2.1

-

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-

-

-

-

-

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-

Yes

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Reliability Data

Die Related Summary Data

Device: SGL160N60UFDTU

Equivalent to wafer fab process: IGBT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

IGBT

1

2930462991

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Re-calculate Data

Data is based on the following assumptions.

Activation Energy (constant) [EV] Junction Temperature (25 - 175) [°C] 60 90 95 99 One-sided Upper Confidence Level [%]

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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