SGL160N60UFD: 600V, 50A Short Circuit Rated IGBT - Onsemi
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600V, 50A Short Circuit Rated IGBT
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Product Details Technical DocumentationOverview
WaitingDownload Overview
ON Semiconductor’s RUFD series of Insulated Gate Bipolar Transistors(IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, UPS and general inverters where short circuit ruggedness is a required feature.
Application
- Other Industrial
Feature
- High Speed Switching
- Low Saturation Voltage : V CE(sat) = 2.1 V @ I C = 80A
- High Input Impedance
- CO-PAK, IGBT with FRD : t rr = 75ns (typ.)
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- Eon Typ (mJ)
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VF Typ (V)
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TO-264-3
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TUBE
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Die Related Summary Data
Device: SGL160N60UFDTU
Equivalent to wafer fab process: IGBT
Product Technology
Product Technology
Equivalent Device-Hours
MTBF/MTTF in Hours
FITS
IGBT
1
2930462991
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Re-calculate Data
Data is based on the following assumptions.
Activation Energy (constant) [EV] Junction Temperature (25 - 175) [°C] 60 90 95 99 One-sided Upper Confidence Level [%]Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)
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