Impact Of N2O/NH3/N2 Gas Mixture On The Interface Quality Of ...

Skip to contentECS TransactionsImpact of N2O/NH3/N2 Gas Mixture on the Interface Quality of Germanium MOS Capacitors

Ghada Dushaq, Mahmoud Rasras and Ammar Nayfeh

© 2016 ECS - The Electrochemical Society ECS Transactions, Volume 75, Number 8Citation Ghada Dushaq et al 2016 ECS Trans. 75 661DOI 10.1149/07508.0661ecst

Authors

Ghada Dushaq

AFFILIATIONS

Masdar Institute for Science and Technology

Mahmoud Rasras

AFFILIATIONS

Masdar Institute of Science and Technology

Ammar Nayfeh

AFFILIATIONS

Masdar Institue of Science and Technology, Abu Dhabi, UAE

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Open scienceAuthors

Ghada Dushaq

AFFILIATIONS

Masdar Institute for Science and Technology

Mahmoud Rasras

AFFILIATIONS

Masdar Institute of Science and Technology

Ammar Nayfeh

AFFILIATIONS

Masdar Institue of Science and Technology, Abu Dhabi, UAE

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Article information 1938-5862/75/8/661

Abstract

In this paper, nitration of germanium surface using a mixture of N2O, NH3 and N2 is performed using RF-PECVD reactor. The electrical characteristics of Al/HfO2/GeON/p-Ge capacitors are investigated. Results show that the hysteresis of metal–oxide–semiconductor (MOS) capacitors with nitration-based passivation step is reduced to ~150 mV, compared with ~400mV of the untreated sample. The suppression of hysteresis is attributed to the reduction of electron traps and enhancement of dielectric/Ge interface quality. The improved interface quality of plasma-based nitration of Ge surface is a promising technique for high performance Ge MOSFET fabrication.

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Back to top10.1149/07508.0661ecst

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