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https://www.nist.gov/publications/search_by_author/1153981
Search Publications by: Christina Hacker (Fed) Search Search Title, Abstract, Conference, Citation, Keyword or Author
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Displaying 1 - 25 of 87 Commercial imaging technologies have an increasing need for an accurate, in-situ beam locator to ensure laser alignment during operation. In this work, gallium nitride LED with indium gallium nitride quantum wells is leveraged is leveraged to create a Polymer passivation has been leveraged to improve photodetection in two dimensional transition metal dichalcogenide field-effect transistors (2D TMD FETs). The relative passivation effects of common polymers, however, is not well understood. In this work Hafnium zirconium oxide (HZO)-based ferroelectric field-effect transistors (FeFETs) are three-terminal devices with attractive properties for embedded memory and in-memory computing architectures. We probe the HZO ferroelectric landscape dynamics with The development of processes to controllably dope two-dimensional semiconductors is critical to achieving next generation electronic and optoelectronic devices. Understanding the nature of the contacts is a critical step for realizing efficient charge The charge-transfer (CT) state arising as a hybrid electronic state at the interface between charge donor and charge acceptor molecular units is important to a wide variety of physical processes in organic semiconductor devices. The exact nature of this Mixed-halide organolead perovskites (MAPbX3) are of great interest for both single junction and tandem solar cells because their bandgap can be effectively tuned by varying the halide ratio. In this study, we investigate the family of mixed iodide/bromide Controlling the morphology of metal halide perovskite layers during processing is critical for the reliable manufacturing of optoelectronic devices. Here we report on a strategy to control the microstructure of solution-processed layered Ruddlesden-Popper Preventing the degradation of hybrid perovskite by humid air remains a challenge for their future commercial utilization. 3D/2D perovskites with hierarchical architecture have attracted significant attention due to their promising power conversion Triple-cation hybrid perovskites with mixed-halide have become one of the most dominant composition due to superior photovoltaic performance and stability. In this study, we systematically investigate the incorporation of cesium (Cs+) and potassium (K+) at Perovskite photovoltaics have made extraordinary progress in efficiency and stability in the past few years owing to process and formulation developments like antisolvent drip and mixed-cation mixed-halide compositions. Perovskite solar cells performance MoS2 is known to show stubborn n-type behavior due to its intrinsic band structure and Fermi level pinning. Here, we investigate the combined effects of molecular doping and contact engineering on the transport and contact properties of monolayer (ML) MoS2 Developing processes to controllably dope transition-metal dichalcogenides (TMDs) is critical to achieving commercial integration for optical and electrical applications. In this study, molecular reductants and oxidants are introduced onto a series of The transport properties of electronic devices made from single crystalline molecular semiconductors outperform those composed of thin-films. To further understand the superiority of these extrinsic properties, an understanding of the intrinsic electronic Surface dipoles are a powerful tool in interfacial modification for improving device output via energy level matching. Fluorinated alkanethiols show strong promise for these applications as they can generate large and tunable dipoles based on fluorine Monolayer epitaxial graphene (EG), grown on the Si face of SiC, is an advantageous material for a variety of electronic and optical applications. EG forms as a single crystal over millimeter- scale areas and consequently, the large scale single crystal can Innovation in the electronics industry is tied to interface engineering as devices increasingly incorporate new materials and shrink. Molecular layers offer a versatile means of tuning interfacial electronic, chemical, physical, and magnetic properties Atmospheric chemical doping can be used to modify the electronic properties of graphene. Although extensive experimental work on tuning atmospheric chemical doping of graphene has been reported, such a study of graphene on SiC is still lacking. Here we In organic electronics, the highest estimated charge mobility in a device is typically achieved when the organic semiconductor is a single crystal. However, the measurement of the electronic and chemical structure of organic single crystals by Organic field effect transistor (OFET) performance is dictated by the composition and geometry of the device, as well as the quality of the organic semiconductor (OSC) film, which strongly depends on the purity and structural defects. When present, these Attaching and integrating electrochemically-active molecules to a variety of different surfaces is of importance for applications in catalysis, memory devices, and molecular electronics. With the increasing demand for personal electronics, growth in Flash
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