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• Hf (Ot-C4H9)4/(99.99% Excluding Zr) テトラ-t-ブトキシハフニウム

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• The Tert-butyl Cation (C4H9+) Potential Energy Surface

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• Well-behaved Metal–oxide–semiconductor Capacitor Characteristics ...

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• Hf(O-t-C4H9)4を用いた光アシストMOCVDによるHfO2薄膜の作製と ...

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• Preparation Of HfO2 Thin Films By Using Photoassisted MOCVD And ...

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