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• Hf (Ot-C4H9)4/(99.99% Excluding Zr) テトラ-t-ブトキシハフニウム

• Integrated Ferroelectrics - Taylor & Francis Online

• Source Gas Pulse-introduced MOCVD Of HfO2 Thin Films Using Hf(O-t ...

• The Tert-butyl Cation (C4H9+) Potential Energy Surface

• Hf(Ot-C4H9)(4)及びSi(Ot-C4H9)(4)の混合前駆体を用いる光支援 ...

• Well-behaved Metal–oxide–semiconductor Capacitor Characteristics ...

• Organometallic Hafnium

• Hf(O-t-C4H9)4を用いた光アシストMOCVDによるHfO2薄膜の作製と ...

• Preparation And Characterization Of Hafnium Silicate Dielectric Layers ...

• Preparation Of HfO2 Thin Films By Using Photoassisted MOCVD And ...

• C4H8 + HF = C4H9{+} + F{-} - Chemical Equation Balancer

• [PDF] Synthesis, Characterization And Physical/chemical Properties Of ...